Study of the Raman peak shift and the linewidth of light-emitting porous silicon
نویسندگان
چکیده
The correlation between the Raman peak shift and the linewidth of porous silicon is studied. The experimental result does not fit with the relationship predicted by the phonon confinement model. By taking into account both the phonon confinement and ‘the effect of strain, the calculated Raman line shape coincides fairly well with the measured spectrum. The built-in strain of porous silicon varies with the porosity of the sample and is on the order of 10m3.
منابع مشابه
Correlation Between Surface Morphology and Optical Properties of Quasi-Columnar Porous Silicon Nanostructures
In the current work, the effect of surface morphology on light emission property and absorption behavior of quasi-columnar macro-porous silicon (PS) was investigated. PS structures with different morphology were synthesized using photo-electrochemical etching method by applying different etching current densities. SEM micrographs showed that empty macro-pores size and porosity of PS layers were...
متن کاملInvestigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications
Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملهمبستگی تخلخل با زبری توسط طیف پراکندگی سطوح نانویی سیلیکان متخلخل
Reflection spectra of four porous silicon samples under etching times of 2, 6, 10, and 14 min with current density of 10 mA/cm2 were measured. Reflection spectra behaviors for all samples were the same, but their intensities were different and decreased by increasing the etching time. The similar behavior of reflection spectra could be attributed to the electrolyte solution concentration which ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2000